Assoc. Prof. Dr. Shunli Ma | Electromagnetic | Best Researcher Award
Assoc. Prof. Dr. Shunli Ma, Fudan University, China
🏆 Summary of Suitability for Best Researcher Award: Shunli Ma
Shunli Ma, currently an Associate Professor at Fudan University, stands out as a highly accomplished and impactful researcher in the fields of analog sensor circuits, millimeter wave radar technology, and millimeter wave imaging. With over a decade of academic, industrial, and research experience—including key contributions to commercialized technologies—Dr. Ma is an outstanding candidate for the Best Researcher Award.
🎓 Education & Research Training
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📍 Postdoctoral Fellow, Fudan University (2017–2018)
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🎓 Research Fellow, VIRTUS Lab, Nanyang Technological University, Singapore (2012–2014)
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Focus: 60GHz communication chip design
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💼 Work Experience
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👨🏫 Associate Professor, Fudan University (2022–Present)
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Research Areas: Analog sensor circuit design, automotive millimeter-wave radar, and millimeter-wave imaging technology
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👨🔬 Young Associate Researcher, Fudan University (2018–2022)
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🧪 Postdoctoral Fellow, Fudan University (2017–2018)
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🛠️ Founding Engineer, Gatland Microelectronics, Shanghai (2016–2017)
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Led design of 77GHz FMCW phase-locked loops and high-performance amplifiers
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Key contributor to the first domestic mass-produced 77GHz CMOS car-mounted millimeter-wave radar
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🌐 Researcher, VIRTUS Lab, Nanyang Technological University, Singapore (2012–2014)
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Worked on mass-producible 60GHz communication chips
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🏆 Achievements
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📄 Published over 50 papers in top-tier journals (e.g., TCAS-I/II, TMTT)
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📘 Total of 27 high-level academic publications
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🔬 Granted 13 national invention patents
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📊 Involved in multiple national, provincial, and ministerial-level research projects
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🤝 Collaborates with various research institutions and industry partners
🏅 Awards & Honors
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🧠 Recognized as a leading expert in millimeter-wave circuit design
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🥇 Contributions led to mass production of China’s first 77GHz CMOS automotive radar module
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🛡️ Key innovator in high-performance analog and RF IC design
Publication Top Notes:
A Harmonic-Suppressed GaN Power Amplifier Using Artificial Coupled Resonator
High drain field impact ionization transistors as ideal switches
Long-Range Epitaxial MOF Electronics for Continuous Monitoring of Human Breath Ammonia
Multi-Sampling Mode CDAC Design for a 12-Bit 200MS/s Pipelined-SAR ADC
A 3-to-78-GHz Distributed Low-Noise Amplifier Incorporating High-Gain Differential gm Cells and Balanced Active Balun in a 65-nm CMOS
A 140- and 220-GHz Dual-Band Amplifier in 130-nm SiGe BiCMOS Process
A millimeter-wave broadband power amplifier with a tree-like transistor structure using 0.15-μm GaAs technology
Hybrid neuromorphic hardware with sparing 2D synapse and CMOS neuron for character recognition
A 40nm 2TOPS/W Depth-Completion Neural Network Accelerator SoC With Efficient Depth Engine for Realtime LiDAR Systems
A 124-to-152-GHz Power Amplifier Exploiting Chebyshev-Type Two-Section Wideband and Low-Loss Power-Combining Technique in 28-nm CMOS