Ms. Navneet Gandhi | Gas Sensor Awards | Best Researcher AwardΒ
Ms. Navneet Gandhi, IIITDM jabalpur, India
Navneet Gandhi is an aspiring semiconductor researcher currently pursuing a Ph.D. at IIITDM Jabalpur, India, with a strong focus on advanced nanoelectronic devices and sensor technologies. Her doctoral research centers on the simulation, fabrication, and machine learning-aided optimization of junctionless FET-based sensors, emphasizing negative capacitance and strain silicon approaches. With a Masterβs degree in Embedded Systems and VLSI Design from SVITS Indore and a Bachelor’s degree in Electronics and Telecommunication Engineering from LNCT Indore, Navneet has built a solid academic foundation. Her research interests span simulation and modeling of NC-FET-based biosensors and gas sensors, the use of AI techniques in semiconductor device analysis, and the exploration of next-generation device architectures such as nanosheets, forksheets, and FerroFETs. Additionally, she is engaged in the fabrication of nanomaterial-based sensors. Navneet combines strong theoretical expertise with hands-on experience, aiming to contribute significantly to the advancement of sensor technology and nanoelectronics.
Professional Profile:
Summary of Suitability: Navneet Gandhi β Best Researcher Award
Navneet Gandhi is a highly promising researcher in the field of semiconductor devices, nanosensors, and machine learning-assisted modeling. With a solid academic background and deep-rooted research expertise, she is making significant contributions to the advancement of next-generation sensor technologies.
π Education Background
-
π Ph.D. (Pursuing) | 2021 β 2024
Institute: IIITDM Jabalpur, India
Thesis: Simulation, Fabrication, and Machine Learning-Aided Optimization of Advanced Junctionless FET-Based Sensors With Negative Capacitance and Strain Silicon Approach -
π Master of Engineering (M.E.) | 2011 β 2014
Specialization: Embedded System and VLSI Design
Institute: SVITS, Indore, India
Percentage: 79.6%
Thesis: Design of Voice Morphing System Using FFT -
π Bachelor of Engineering (B.E.) | 2006 β 2010
Specialization: Electronics and Telecommunication Engineering
Institute: L.N.C.T, Indore, India
Percentage: 79.78% -
π« Intermediate (12th) | 2005 β 2006
Board: Govt. G. H. S. School, Khirkiya (M.P)
Percentage: 88%
Subjects: Physics, Chemistry, Mathematics, English, Hindi -
π« High School (10th) | 2003 β 2004
Board: Govt. G. H. S. School, Khirkiya (M.P), India
π Achievements, Awards & Honors
β¨ Academic Excellence:
-
Consistently performed with distinction in both undergraduate and postgraduate studies (Above 79% in B.E. and M.E.) ποΈ
-
88% in Intermediate with strong fundamentals in science and mathematics ππ¬
π Research Contributions (Ph.D. Focus):
-
Advanced research in simulation and fabrication of Negative Capacitance FET-based sensors
-
Integration of Machine Learning and Deep Learning in semiconductor device analysis π€π
-
Exploration of emerging technologies including NC-FETs, Nanosheets, Forksheet, and FerroFETs
π¬ Interdisciplinary Skills:
-
Simulation βοΈ
-
Nanomaterials fabrication π§ͺ
-
Sensor modeling π
-
AI-based device optimization π§