Ms. Navneet Gandhi, IIITDM jabalpur, India
Navneet Gandhi is an aspiring semiconductor researcher currently pursuing a Ph.D. at IIITDM Jabalpur, India, with a strong focus on advanced nanoelectronic devices and sensor technologies. Her doctoral research centers on the simulation, fabrication, and machine learning-aided optimization of junctionless FET-based sensors, emphasizing negative capacitance and strain silicon approaches. With a Master’s degree in Embedded Systems and VLSI Design from SVITS Indore and a Bachelor’s degree in Electronics and Telecommunication Engineering from LNCT Indore, Navneet has built a solid academic foundation. Her research interests span simulation and modeling of NC-FET-based biosensors and gas sensors, the use of AI techniques in semiconductor device analysis, and the exploration of next-generation device architectures such as nanosheets, forksheets, and FerroFETs. Additionally, she is engaged in the fabrication of nanomaterial-based sensors. Navneet combines strong theoretical expertise with hands-on experience, aiming to contribute significantly to the advancement of sensor technology and nanoelectronics.
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Summary of Suitability: Navneet Gandhi – Best Researcher Award
Navneet Gandhi is a highly promising researcher in the field of semiconductor devices, nanosensors, and machine learning-assisted modeling. With a solid academic background and deep-rooted research expertise, she is making significant contributions to the advancement of next-generation sensor technologies.
📚 Education Background
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🎓 Ph.D. (Pursuing) | 2021 – 2024
Institute: IIITDM Jabalpur, India
Thesis: Simulation, Fabrication, and Machine Learning-Aided Optimization of Advanced Junctionless FET-Based Sensors With Negative Capacitance and Strain Silicon Approach
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🎓 Master of Engineering (M.E.) | 2011 – 2014
Specialization: Embedded System and VLSI Design
Institute: SVITS, Indore, India
Percentage: 79.6%
Thesis: Design of Voice Morphing System Using FFT
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🎓 Bachelor of Engineering (B.E.) | 2006 – 2010
Specialization: Electronics and Telecommunication Engineering
Institute: L.N.C.T, Indore, India
Percentage: 79.78%
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🏫 Intermediate (12th) | 2005 – 2006
Board: Govt. G. H. S. School, Khirkiya (M.P)
Percentage: 88%
Subjects: Physics, Chemistry, Mathematics, English, Hindi
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🏫 High School (10th) | 2003 – 2004
Board: Govt. G. H. S. School, Khirkiya (M.P), India
🏆 Achievements, Awards & Honors
✨ Academic Excellence:
🌟 Research Contributions (Ph.D. Focus):
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Advanced research in simulation and fabrication of Negative Capacitance FET-based sensors
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Integration of Machine Learning and Deep Learning in semiconductor device analysis 🤖📊
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Exploration of emerging technologies including NC-FETs, Nanosheets, Forksheet, and FerroFETs
🔬 Interdisciplinary Skills:
Publication Top Notes:
Self-heating and interface traps assisted noise behavior analysis of JL-FinFET H2 gas sensor
Proof of concept: comparative study of machine learning models for optimization and performance evaluation of DM RSD JLNC-FinFET biosensor
Revealing the Reliability Performance of a Dielectric-Modulated Negative Capacitance Junctionless FinFET Biosensor
Junctionless negative capacitance FinFET-based dielectric modulated biosensor with strain silicon integration at different FE thickness
A proof of concept for reliability aware analysis of junctionless negative capacitance FinFET-based hydrogen sensor
Unveiling the Self-Heating and Process Variation Reliability of a Junctionless FinFET-Based Hydrogen Gas Sensor
Demonstration of a Junctionless Negative Capacitance FinFET-based Hydrogen Gas Sensor: A Reliability Perspective
Self-Heating and Interface Traps Assisted Early Aging Revelation and Reliability Analysis of Negative Capacitance FinFET